TRANSISTOR TO5

Description

Product Category: Bipolar Transistors - BJT
RoHS: RoHS Compliant Details
Brand: Central Semiconductor
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 120 V
Collector- Emitter Voltage VCEO Max: 80 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 250 mV
Maximum DC Collector Current: 150 mA
Gain Bandwidth Product fT: 50 MHz
Mounting Style: Through Hole
Package/Case: TO-39
DC Collector/Base Gain hFE Min: 40 at 150 mA, 10 V
DC Current Gain hFE Max: 120
Packaging: Bulk
Pd - Power Dissipation: 0.8 W

Caractèristiques