TRANSISTOR Si NPN 500mA 120V TO5

Description

Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 120 V
Collector- Emitter Voltage VCEO Max: 80 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 1.2 V
Maximum DC Collector Current: 0.5 A
Gain Bandwidth Product fT: 50 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package/Case: TO-39
DC Collector/Base Gain hFE Min: 20
Minimum Operating Temperature: - 65 C
Packaging: Bulk
Pd - Power Dissipation: 0.8 W

Caractèristiques