Optocoupleur Phototransistor 2 canaux DIL8

Description

Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Reserve voltage VR 6 V
Forward current IF 60 mA
Forward surge current tp 3 10
s IFSM 1.5 A
Power dissipation Tamb 3 25°C PV 100 mW
Junction temperature Tj 125 °C
Output (Detector)
Parameters Test Conditions Symbol Value Unit
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7 V
Collector current IC 50 mA
Peak collector current tp/T = 0.5, tp 3 10 ms ICM 100 mA
Power dissipation Tamb 3 25°C PV 150 mW
Junction temperature Tj 125 °C

Caractèristiques