MOSFET 500V N-Ch Q-FET advance C-Series

Description

Attention! Compte tenu du contexte de pénurie actuel, les délais indiqués sont purement indicatifs et ne sont pas contractuels.

Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 9 A
Rds On - Drain-Source Resistance: 800 mOhms
Vgs - Gate-Source Voltage: 30 V
Maximum Operating Temperature: + 150 C
Packaging: Tube
Channel Mode: Enhancement
Brand: Fairchild Semiconductor
Configuration: Single
Fall Time: 64 ns
Forward Transconductance - Min: 6.5 S
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 44 W
Rise Time: 65 ns
Series: FQPF9N50C
Factory Pack Quantity: 1000
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 93 ns

Caractèristiques