TRANSISTOR

Description

Product Category: Bipolar Transistors - BJT
RoHS: RoHS Compliant Details
Brand: Central Semiconductor
Configuration: Single
Transistor Polarity: PNP
Collector- Base Voltage VCBO: 60 V
Collector- Emitter Voltage VCEO Max: 60 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 2.6 V
Maximum DC Collector Current: 600 mA
Gain Bandwidth Product fT: 200 MHz
Maximum Operating Temperature: + 200 C
Mounting Style: Through Hole
Package/Case: TO-18
DC Collector/Base Gain hFE Min: 40 at 150 mA, 10 V
Minimum Operating Temperature: - 65 C
Packaging: Bulk
Pd - Power Dissipation: 4000 mW

Caractèristiques