TRANSISTOR

Description

Product Category: Bipolar Transistors - BJT
RoHS: RoHS Compliant Details
Brand: Central Semiconductor
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 45 V
Collector- Emitter Voltage VCEO Max: 45 V
Emitter- Base Voltage VEBO: 6.5 V
Gain Bandwidth Product fT: 100 MHz
Mounting Style: Through Hole
Package/Case: TO-92
DC Collector/Base Gain hFE Min: 500
DC Current Gain hFE Max: 1500
Packaging: Bulk
Pd - Power Dissipation: 625 mW

Caractèristiques