TRANSISTOR

Description

Product Category: Bipolar Transistors - BJT
RoHS: In Transition
Brand: Central Semiconductor
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 40 V
Collector- Emitter Voltage VCEO Max: 15 V
Emitter- Base Voltage VEBO: 5 V
Gain Bandwidth Product fT: 40 MHz
Mounting Style: Through Hole
Package/Case: TO-18
DC Collector/Base Gain hFE Min: 30
Packaging: Bulk
Pd - Power Dissipation: 0.5 W

Caractèristiques