TRANSISTOR

Description

Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 60 V
Collector- Emitter Voltage VCEO Max: 60 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 0.35 V
Maximum DC Collector Current: 0.05 A
Gain Bandwidth Product fT: 60 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package/Case: TO-18
DC Collector/Base Gain hFE Min: 200
Minimum Operating Temperature: - 65 C
Packaging: Bulk
Pd - Power Dissipation: 360 mW

Caractèristiques